Отправил an.Дата добавления 08.09.2009 (1385 прочтений)
HEXFET® Power MOSFET High frequency DC-DC converters Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current