Отправил foobar.Дата добавления 09.09.2009 (1524 прочтений)
HEXFET® Power MOSFET Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective COSS specified (See AN 1001)