SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION
The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

FEATURES
Low on-state resistance:
RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A)
Low gate charge:
QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A)
Gate voltage rating: ±30 V
Avalanche capability ratings
Isolated TO-220 package