Отправил an.Дата добавления 01.09.2009 (2629 прочтений)
HEXFET® Power MOSFET Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss Specified (See AN 1001)