Отправил an.Дата добавления 29.08.2009 (2482 прочтений)
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPICAL RDS(on) = 0.095 W AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 C OPERATING TEMPERATURE
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