Отправил an.Дата добавления 28.08.2009 (2490 прочтений)
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPICAL RDS(on) = 0.1 W AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE