Отправил an.Дата добавления 08.09.2009 (1382 прочтений)
HEXFET® Power MOSFET High frequency DC-DC converters Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current
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