. . . designed for general–purpose amplifier and low–speed switching applications.
High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc
Collector–Emitter Sustaining Voltage — @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) — 2N6035, 2N6038
VCEO(sus) = 80 Vdc (Min) — 2N6036, 2N6039
Forward Biased Second Breakdown Current Capability IS/b = 1.5 Adc @ 25 Vdc
Monolithic Construction with Built–In Base–Emitter Resistors to Limit Leakage Multiplication
Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic Package