SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION
The 2SK3299 is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter.

FEATURES
Low gate charge
QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)
Gate voltage rating ±30 V
Low on-state resistance
RDS(on) = 0.75 W MAX. (VGS = 10 V, ID = 5.0 A)
Avalanche capability ratings
Surface mount package available